Influence of EDTA concentration on the structure and properties of SnS films prepared by electro-deposition
Identifieur interne : 001114 ( Chine/Analysis ); précédent : 001113; suivant : 001115Influence of EDTA concentration on the structure and properties of SnS films prepared by electro-deposition
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Abstract
Tin sulfide (SnS) thin films were deposited onto indium tin oxide (ITO) glass substrates by cathodic electro-deposition from aqueous solution containing ethylene diamine tetraacetate acid (EDTA). Because EDTA can slow the deposition rate of Sn through formation of Sn chelates, it is possible to obtain stoichiometric SnS films with good quality by adding EDTA to the deposition bath. The deposited films were characterized with X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy (Raman), and ultraviolet-visible-near infrared (UV-VIS-NIR) spectrophotometer. The as-deposited films are mainly polycrystalline SnS with orthorhombic crystalline structure, and they show good uniformity and surface coverage with root mean square (RMS) roughness of 45.36-62.39 nm and grain sizes of 100-300 nm. Raman microscopy shows that the films have bands at around 190 and 218 cm-1 belonging to Ag mode of SnS. The concentration ratio of EDTA and Sn2+ (EDTA/Sn2+) has some influence on the structure, phase, Raman shift and optical properties of the deposited films. When the EDTA/Sn2+ is less than 0.5, the films have a Raman shift at around 306 cm-1 due to Sn2S3. XPS analysis also shows that there exists a Sn2S3 phase in the deposited films. When the EDTA/Sn2+ equals 1/1, there is only the SnS phase in the deposited films. With an increase of the EDTA/Sn2+ from 0.1 to 1, the direct band gap of the films is decreased from 1.75 eV to 1.43 eV. Therefore EDTA/Sn2+= 1/1 is good for depositing SnS films.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of EDTA concentration on the structure and properties of SnS films prepared by electro-deposition</title><author><name>SHUYING CHENG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory Breeding Base of Photocatalysis. Department of Electronic Science and Applied Physics, Fuzhou University</s1><s2>Fuzhou, 350002</s2><s3>CHN</s3><sZ>1 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Fuzhou, 350002</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>The MOE Key Lab of Analytical and Detection Technique For Food Safety, Chemistry Department. Fuzhou University</s1><s2>Fuzhou, Fujian 350002</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Fuzhou, Fujian 350002</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>ARC Photovoltaics Centre of Excellence, UNSW</s1><s2>Sydney, NSW 2052</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Australie</country><wicri:noRegion>Sydney, NSW 2052</wicri:noRegion></affiliation></author><author><name>YINGJIE HE</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>The MOE Key Lab of Analytical and Detection Technique For Food Safety, Chemistry Department. Fuzhou University</s1><s2>Fuzhou, Fujian 350002</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Fuzhou, Fujian 350002</wicri:noRegion></affiliation></author><author><name>GUONAN CHEN</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>The MOE Key Lab of Analytical and Detection Technique For Food Safety, Chemistry Department. Fuzhou University</s1><s2>Fuzhou, Fujian 350002</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Fuzhou, Fujian 350002</wicri:noRegion></affiliation></author><author><name sortKey="Cho, Eun Chel" uniqKey="Cho E">Eun-Chel Cho</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>ARC Photovoltaics Centre of Excellence, UNSW</s1><s2>Sydney, NSW 2052</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Australie</country><wicri:noRegion>Sydney, NSW 2052</wicri:noRegion></affiliation></author><author><name sortKey="Conibeer, Gavin" uniqKey="Conibeer G">Gavin Conibeer</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>ARC Photovoltaics Centre of Excellence, UNSW</s1><s2>Sydney, NSW 2052</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Australie</country><wicri:noRegion>Sydney, NSW 2052</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">09-0045945</idno><date when="2008">2008</date><idno type="stanalyst">PASCAL 09-0045945 INIST</idno><idno type="RBID">Pascal:09-0045945</idno><idno type="wicri:Area/Main/Corpus">005D58</idno><idno type="wicri:Area/Main/Repository">006469</idno><idno type="wicri:Area/Chine/Extraction">001114</idno></publicationStmt><seriesStmt><idno type="ISSN">0257-8972</idno><title level="j" type="abbreviated">Surf. coat. technol.</title><title level="j" type="main">Surface & coatings technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Quantity ratio</term><term>Surface treatments</term><term>Thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet concentration</term><term>Couche mince</term><term>Traitement surface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Tin sulfide (SnS) thin films were deposited onto indium tin oxide (ITO) glass substrates by cathodic electro-deposition from aqueous solution containing ethylene diamine tetraacetate acid (EDTA). Because EDTA can slow the deposition rate of Sn through formation of Sn chelates, it is possible to obtain stoichiometric SnS films with good quality by adding EDTA to the deposition bath. The deposited films were characterized with X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy (Raman), and ultraviolet-visible-near infrared (UV-VIS-NIR) spectrophotometer. The as-deposited films are mainly polycrystalline SnS with orthorhombic crystalline structure, and they show good uniformity and surface coverage with root mean square (RMS) roughness of 45.36-62.39 nm and grain sizes of 100-300 nm. Raman microscopy shows that the films have bands at around 190 and 218 cm<sup>-1</sup> belonging to Ag mode of SnS. The concentration ratio of EDTA and Sn<sup>2+</sup> (EDTA/Sn<sup>2+</sup>) has some influence on the structure, phase, Raman shift and optical properties of the deposited films. When the EDTA/Sn<sup>2+</sup> is less than 0.5, the films have a Raman shift at around 306 cm<sup>-1</sup> due to Sn<sub>2</sub>S<sub>3</sub>. XPS analysis also shows that there exists a Sn<sub>2</sub>S<sub>3</sub> phase in the deposited films. When the EDTA/Sn<sup>2+</sup> equals 1/1, there is only the SnS phase in the deposited films. With an increase of the EDTA/Sn<sup>2+</sup> from 0.1 to 1, the direct band gap of the films is decreased from 1.75 eV to 1.43 eV. Therefore EDTA/Sn<sup>2+</sup>= 1/1 is good for depositing SnS films.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0257-8972</s0></fA01><fA02 i1="01"><s0>SCTEEJ</s0></fA02><fA03 i2="1"><s0>Surf. coat. technol.</s0></fA03><fA05><s2>202</s2></fA05><fA06><s2>24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Influence of EDTA concentration on the structure and properties of SnS films prepared by electro-deposition</s1></fA08><fA11 i1="01" i2="1"><s1>SHUYING CHENG</s1></fA11><fA11 i1="02" i2="1"><s1>YINGJIE HE</s1></fA11><fA11 i1="03" i2="1"><s1>GUONAN CHEN</s1></fA11><fA11 i1="04" i2="1"><s1>CHO (Eun-Chel)</s1></fA11><fA11 i1="05" i2="1"><s1>CONIBEER (Gavin)</s1></fA11><fA14 i1="01"><s1>State Key Laboratory Breeding Base of Photocatalysis. Department of Electronic Science and Applied Physics, Fuzhou University</s1><s2>Fuzhou, 350002</s2><s3>CHN</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>The MOE Key Lab of Analytical and Detection Technique For Food Safety, Chemistry Department. Fuzhou University</s1><s2>Fuzhou, Fujian 350002</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>ARC Photovoltaics Centre of Excellence, UNSW</s1><s2>Sydney, NSW 2052</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>6070-6074</s1></fA20><fA21><s1>2008</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>15987</s2><s5>354000185368300410</s5></fA43><fA44><s0>0000</s0><s1>© 2009 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>20 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>09-0045945</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Surface & coatings technology</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>Tin sulfide (SnS) thin films were deposited onto indium tin oxide (ITO) glass substrates by cathodic electro-deposition from aqueous solution containing ethylene diamine tetraacetate acid (EDTA). Because EDTA can slow the deposition rate of Sn through formation of Sn chelates, it is possible to obtain stoichiometric SnS films with good quality by adding EDTA to the deposition bath. The deposited films were characterized with X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy (Raman), and ultraviolet-visible-near infrared (UV-VIS-NIR) spectrophotometer. The as-deposited films are mainly polycrystalline SnS with orthorhombic crystalline structure, and they show good uniformity and surface coverage with root mean square (RMS) roughness of 45.36-62.39 nm and grain sizes of 100-300 nm. Raman microscopy shows that the films have bands at around 190 and 218 cm<sup>-1</sup> belonging to Ag mode of SnS. The concentration ratio of EDTA and Sn<sup>2+</sup> (EDTA/Sn<sup>2+</sup>) has some influence on the structure, phase, Raman shift and optical properties of the deposited films. When the EDTA/Sn<sup>2+</sup> is less than 0.5, the films have a Raman shift at around 306 cm<sup>-1</sup> due to Sn<sub>2</sub>S<sub>3</sub>. XPS analysis also shows that there exists a Sn<sub>2</sub>S<sub>3</sub> phase in the deposited films. When the EDTA/Sn<sup>2+</sup> equals 1/1, there is only the SnS phase in the deposited films. With an increase of the EDTA/Sn<sup>2+</sup> from 0.1 to 1, the direct band gap of the films is decreased from 1.75 eV to 1.43 eV. Therefore EDTA/Sn<sup>2+</sup>= 1/1 is good for depositing SnS films.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A65</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Effet concentration</s0><s5>55</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Quantity ratio</s0><s5>55</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche mince</s0><s5>56</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Thin films</s0><s5>56</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Traitement surface</s0><s5>57</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Surface treatments</s0><s5>57</s5></fC03><fN21><s1>033</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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